2SB1132 datasheet(1/2 Pages) SECOS

Part #	2SB1132

Description	-1A, -40V PNP Silicon Medium Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 2 page

Elektronische Bauelemente

2SB1132

-1A, -40V

PNP Silicon Medium Power Transistor

02-

Nov-2012 Rev. C

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Low power dissipation 0.5W

CLASSIFICATION OF hFE

Product Rank

2SB1132-P

2SB1132-Q

2SB1132-R

Range

82~180

120~270

180~390

Marking

BAP

BAQ

BAR

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-89

1K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-32

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-1

A

Collector Power Dissipation

PC

500

mW

Junction & Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

-40

-

V

IC= -50μA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

-32

-

V

IC= -1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

-5

-

V

IE= -50μA, IC=0

Collector cut-off current

ICBO

-

-0.5

μA

VCB= -20V, IE=0

Emitter cut-off current

IEBO

-

-0.5

μA

VEB= -4V, IC=0

DC current gain

hFE

82

-

390

VCE= -3V, IC= -100mA

Collector-emitter saturation voltage

VCE(sat)

-

-0.2

-0.5

V

IC= -500mA, IB= -50mA

Transition frequency

fT

-

150

-

MHz

VCE= -5V, IC= -50mA,

f=30MHz

Collector output capacitance

Cob

-

20

30

pF

VCB= -10V, IE=0, f=1MHz

A

E

C

D

B

K

H

F

G

L

J

1 2 3

4

SOT-89

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.60

G

0.40

0.58

B

3.94

4.25

H

1.50 TYP

C

1.40

1.60

J

3.00 TYP

D

2.30

2.60

K

0.32

0.52

E

1.50

1.70

L

0.35

0.44

F

0.89

1.2

Similar Part No. - 2SB1132

Manufacturer	Part #	Datasheet	Description
Rohm	2SB1132	128Kb / 4P	Medium Power Transistor
Weitron Technology	2SB1132	348Kb / 5P	PNP Plastic-Encapsulate Transistors
Unisonic Technologies	2SB1132	59Kb / 4P	MEDIUM POWER TRANSISTOR
Rohm	2SB1132	79Kb / 5P	Medium Power Transistor (−32V,−1A)
TRANSYS Electronics Lim...	2SB1132	64Kb / 1P	Plastic-Encapsulated Transistors

More results

Similar Description - 2SB1132

Manufacturer	Part #	Datasheet	Description
Zetex Semiconductors	ZXTP25040DFH	245Kb / 6P	40V SOT23 PNP medium power transistor
	ZXTP07040DFF	443Kb / 6P	40V, SOT23F, PNP medium power transistor
	ZXTP25040DZ	385Kb / 8P	40V PNP medium power transistor
Diodes Incorporated	FCX591A	199Kb / 7P	40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 S33062 Rev. 4 - 2
	ZXTP2041F	221Kb / 6P	40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Rev 6
	ZXTP07040DFF	455Kb / 6P	40V, SOT23F, PNP medium power transistor SEPTEMBER 2006
	ZXTP25040DFH	251Kb / 6P	40V SOT23 PNP medium power transistor MARCH 2008
	ZXTP25040DFH	251Kb / 6P	40V SOT23 PNP medium power transistor MARCH 2008
	FZT1151A	812Kb / 7P	40V PNP MEDIUM POWER TRANSISTOR Rev 2
	FCX591AQ	409Kb / 7P	40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Rev 2

More results

2SB1132 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SB1132 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - 2SB1132

Similar Description - 2SB1132

Html Pages

1 2

Datasheet Download

Link URL