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2SC1162 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1162 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 07-Mar-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D Range 60~120 100~200 160~320 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 35 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2.5 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 35 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut – Off Current ICBO - - 20 μA VCB=35V, IE=0 Emitter Cut – Off Current IEBO - - 20 μA VEB=5V, IC=0 DC Current Gain hFE (1) 60 - 320 VCE=2V, IC=0.5A hFE (2) 20 - - VCE=2V, IC=1.5A* Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=2A, IB=200mA Transition Frequency fT - 180 - MHz VCE=2V, IC=200mA Collector Output Capacitance VBE - - 1.5 V VCE=2V, IC=1.5A *Pulse test Emitter Collector Base TO-126 C D B A E N F L G K J H M REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 7.40 7.80 H 1.10 1.50 B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 F 3.90 4.10 N 3.00 3.20 G2.29 TYP. |
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