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RB421D Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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RB421D Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() SMD Type www.kexin.com.cn 1 Diodes Schottky Diodes RB421D (KB421D) ■ Features ● Small surface mounting type ● Low reverse current and low forward voltage ● High reliability 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse Voltage VRM 40 DC Blocking Voltage VR 40 Average Rectified Output Current Io 0.1 Peak Forward Surge Current IFM 1 Power Dissipation PD 250 mW Thermal Resistance Junction to Ambient RθJA 400 ℃ /W Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 150 V A ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 40 IF= 10mA 0.34 IF= 100mA 0.55 Reverse voltage leakage current IR VR=10 V 30 uA Capacitance between terminals CT VR=10 V, f= 1 MHz 6 pF Forward voltage VF V ■ Marking Marking D3C |
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