BCP55_15 datasheet(1/2 Pages) SECOS

Part #	BCP55

Description	NPN Silicon Medium Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 2 page

Elektronische Bauelemente

BCP55

1A , 60V

NPN Silicon Medium Power Transistor

11-Aug-2014 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

CLASSIFICATION OF hFE

Product-Rank

BCP55-16

Range

100~250

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-223

2.5K

13’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

1

A

Collector Power Dissipation

PD

1.5

W

Typical Thermal Resistance

RθJA

83.3

°C /W

Storage Temperature

TSTG

-65~+150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

60

-

V

IC=0.1mA , IE=0

Collector-emitter breakdown voltage

V(BR)CEO

60

-

V

IC= 10mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

5

-

V

IE= 10µA, IC=0

Collector cut-off current

ICBO

-

100

nA

VCB= 30V, IE=0

25

-

VCE= 2V, IC= 5mA

100

250

VCE= 2V, IC= 150mA

DC current gain

hFE

25

-

VCE= 2V, IC= 500mA

Collector-emitter saturation voltage

1

VCE(sat)

-

0.5

V

IC=500mA, IB= 50mA

Base-emitter voltage

1

VBE(on)

-

1

V

VCE= 2V, IC= 500mA

Transition frequency

f T

100

-

MHz

VCE=10V, IC=50mA, f=100MHz

Top View

1

2

3

4

A

M

B

D

L

K

F

G

H

J

E

C

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.20

6.70

G

-

0.10

B

6.70

7.30

H

-

C

3.30

3.70

J

0.25

0.35

D

1.42

1.90

K

-

E

4.50

4.70

L

2.30 REF.

F

0.60

0.82

M

2.90

3.10

SOT-223

Similar Part No. - BCP55_15

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BCP55	1Mb / 22P	60 V, 1 A NPN medium power transistors Rev. 8-24 October 2011

More results

Similar Description - BCP55_15

Manufacturer	Part #	Datasheet	Description
Microsemi Corporation	2N1479	55Kb / 2P	NPN SILICON MEDIUM POWER TRANSISTOR
	2N4237	56Kb / 2P	NPN MEDIUM POWER SILICON TRANSISTOR
	2N3506	96Kb / 2P	NPN MEDIUM POWER SILICON TRANSISTOR
SeCoS Halbleitertechnol...	BCP56	182Kb / 2P	NPN Silicon Medium Power Transistor
Leshan Radio Company	L2SC2411KQLT1G	148Kb / 4P	Medium Power Transistor NPN silicon
Microsemi Corporation	JAN2N1479	57Kb / 2P	NPN SILICON MEDIUM POWER TRANSISTOR
Microsemi Corporation	JAN2N1480	57Kb / 2P	NPN SILICON MEDIUM POWER TRANSISTOR
SeCoS Halbleitertechnol...	BCP56	173Kb / 2P	NPN Silicon Medium Power Transistor
	CZT31C-C	251Kb / 2P	NPN Silicon Medium Power Transistor
	PZTA44-C	235Kb / 2P	NPN Silicon Medium Power Transistor

More results

BCP55 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

BCP55 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - BCP55_15

Similar Description - BCP55_15

Html Pages

1 2

Datasheet Download

Link URL