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DAP222 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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DAP222 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type www.kexin.com.cn 1 Diodes Switching Diodes DAP222 (KAP222) ■ Features ● High speed ● Suitable for high packing density layout ● High reliability ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse Voltage VRM 80 DC Reverse Voltage VR 80 Average forward current IO 100 Peak Forward Surge Current IFM 300 Power Dissipation Pd 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 ℃ mA V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 80 Forward voltage VF IF= 100mA 1.2 Reverse voltage leakage current IR VR= 70 V 0.1 uA Junction capacitance Cj VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr IF=IR=5mA , VR=6V 4 ns V ■ Marking Marking P 1 2 3 SOT-523 m m : t i n U 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 0.3±0.05 0.5 +0.1 -0.1 0.15±0.05 1 2 3 |
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