RFD20N03SM datasheet(2/8 Pages) INTERSIL

2 / 8 page

4-428

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Figure 5

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Figure 6

Power Dissipation (Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Derate Above 25oC (Figure 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.60

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

Zero Gate Voltage Drain Current

IDSS

VDS = 30V, VGS = 0V

µA

VDS = 30V, VGS = 0V, TC = 150

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

100

Drain to Source On Resistance

rDS(ON)

ID = 20A, VGS = 10V (Figure 9)

0.022

0.025

Ω

Turn-On Time

tON

VDD = 15V, ID ≅ 20A,

RL =0.75Ω, VGS = 10V,

RGS = 9.1Ω

Turn-On Delay Time

td(ON)

-10-

Rise Time

-30-

Turn-Off Delay Time

td(OFF)

-12-

Fall Time

-32-

Turn-Off Time

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 15V, ID ≅ 20A,

RL = 0.75Ω

Ig(REF) = 1.0mA

(Figure 13)

-60

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

2.4

2.9

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 12)

1150

Output Capacitance

COSS

550

Reverse Transfer Capacitance

CRSS

110

Thermal Resistance Junction to Case

RθJC

(Figure 3)

1.66

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251, TO-252

100

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 20A

1.25

Reverse Recovery Time

trr

ISD = 20A, dISD/dt = 100A/µs-

Reverse Recovered Charge

QRR

ISD = 20A, dISD/dt = 100A/µs

145

RFD20N03, RFD20N03SM

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