RFD3N08LSM datasheet(2/8 Pages) INTERSIL

2 / 8 page

6-27

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD3N08L,

RFD3N08LSM

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Figures 3, 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.2

W/oC

Pulsed Avalanche Energy Rating (Figure 6) (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Refer to UIS Curve

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 12)

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 11)

2.5

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS,

VGS = 0V 125

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 3A, VGS = 5V, (Figures 9, 10)

0.800

Ω

Turn-On Time

t(ON)

VDD = 40V, ID = 3A,

RL = 13.3Ω, VGS = 5V,

RG = 25Ω,

(Figures 13, 15, 18, 19)

Turn-On Delay Time

td(ON)

-15

Rise Time

-45

Turn-Off Delay Time

td(OFF)

-22

Fall Time

-15

Turn-Off Time

t(OFF)

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 64V, ID = 3A,

Ig(REF) = 0.1mA

RL = 21.3Ω

(Figures 15, 20, 21)

6.8

8.5

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

3.8

4.8

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

0.18

0.24

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz,

(Figure 14)

125

Output Capacitance

COSS

Reverse Transfer Characterisics

CRSS

Thermal Resistance, Junction to Case

RθJC

5.0

oC/W

Thermal Resistance, Junction to Ambient

RθJA

100

oC/W

Source to Drain Diode Ratings and Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 3A

1.25

Reverse Recovery Time

trr

ISD = 3A, dISD/dt = 100A/µs-

NOTES:

2. Pulsed: pulse duration = 300

µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. Refer to Intersil Application Notes AN9321 and AN9322.

RFD3N08L, RFD3N08LSM

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