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RFF60P06 Datasheet(PDF) 1 Page - Intersil Corporation |
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RFF60P06 Datasheet(HTML) 1 Page - Intersil Corporation |
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1 / 8 page ![]() 4-181 File Number 3975.2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999. RFF60P06 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. Formerly developmental type TA09835. Commercial Version: RFG60P06E. † Current is limited by the package capability. Features • 25A, 60V •rDS(ON) = 0.030Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 150oC Operating Temperature • Reliability Screened Symbol Packaging JEDEC TO-254AA CAUTION: Berylia Warning per MIL-S-19500. Refer to package specifications. Ordering Information PART NUMBER PACKAGE BRAND RFF60P06 TO-254AA RFF60P06 NOTE: When ordering, use the entire part number. D G S GATE SOURCE DRAIN PACKAGE TAB (ISOLATED) Data Sheet September 1998 |
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Similar Description - RFF60P06 |
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