RFP40N10LE datasheet(2/8 Pages) INTERSIL

2 / 8 page

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

RFG40N10LE, RFP40N10LE,

RF1S40N10LESM

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

100

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

Gate to Source Voltage (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150

1.00

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 13)

100

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 12)

Zero Gate Voltage Drain Current

IDSS

VDS = 95V, VGS = 0V

µA

VDS = 90V, VGS = 0V, TC = 150

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

µA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 40A, VGS = 5V

0.040

Ω

Turn-On Time

tON

VDD = 50V, ID = 40A, RL = 1.25Ω,

VGS = 5V, RGS = 2.5Ω

(Figures 10, 18, 19)

200

Turn-On Delay Time

td(ON)

-22-

Rise Time

140

Turn-Off Delay Time

td(OFF)

-70-

Fall Time

-65-

Turn-Off Time

tOFF

165

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 80V,

ID = 40A,

RL = 2.0Ω

(Figures 20, 21)

145

180

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

105

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 14)

3000

Output Capacitance

COSS

500

Reverse Transfer Capacitance

CRSS

200

Thermal Resistance Junction-to-Case

RθJC

All Packages

1.0

oC/W

Thermal Resistance Junction-to-Ambient

RθJA

TO-247

oC/W

TO-220AB and TO-263AB

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 40A

1.5

Diode Reverse Recovery Time

trr

ISD = 40A, dISD/dt = 100A/µs

205

NOTES:

2. Pulse test: pulse width

≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

RFG40N10LE, RFP40N10LE, RF1S40N10LESM

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