BCX55_15 datasheet(1/1 Pages) SECOS

Part #	BCX55

Description	NPN Transistors

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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BCX55

NPN Transistors

Plastic-Encapsulate Transistors

RoHS Compliant Product

Elektronische Bauelemente

1.BASE

2.COLLECTOR

3.EMITTER

1

2

3

Features

Any changing of specification will not be informed individual

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Page 1 of 1

4.4~4.6

1.4~1.8

0.35~0.44

1.4~1.6

0.32~0.52

0.36~0.56

1.5Ref.

2.9~3.1

Dimensision in Millimeter

SOT-89

C

o

Power dissipation

PCM:

0.5

W (Tamb=25 )

Collector current

ICM:

1

A

Collector-base voltage

V(BR)CBO:

60

V

Operating and storage junction temperature range

TJ, Tstg: -55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA , IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5 V, IC=0

0.1

µA

hFE(1)

VCE=2V, IC= 150mA

63

100

250

160

250

hFE(2)

VCE=2V, IC= 5mA

40

DC current gain

BCX55

BCX55-10

BCX55-16

hFE(3)

VCE=2V, IC= 500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=500 mA, IB= 50mA

0.5

V

Base-emitter

voltage

VBE(ON)

IC= 500 mA, VCE=2V

1

V

Transition frequency

f T

VCE= 10V, IC= 50mA

f = 100MHz

130

MHz

DEVICE MARKING

BCX55=BE

BCX55-10=BG

BCX55-16=BM

C

o

C

o

C

o

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