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C1815 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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C1815 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor 31-Dec-2009 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Power Dissipation MARKING: HF ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation Pc 200 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=100 µA, I E = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=0.1mA, IB = 0A Collector Cut-Off Current ICBO - - 0.1 µA VCB=60 V, IE = 0 A Collector Cut-Off Current ICEO 0.1 µA VCE=50 V, IB = 0 A Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5 V, IC = 0 A DC Current Gain hFE 130 - 400 VCE=6V, IC=2mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base to Emitter Saturation Voltage VBE(sat) - - 1 V IC=100mA, IB=10mA Transition Frequency fT 80 - - MHz VCE = 10V, IC = 1 mA, f = 30 MHz CLASSIFICATION OF hFE Rank L H Range 130-200 200-400 SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 |
Similar Part No. - C1815_15 |
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Similar Description - C1815_15 |
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