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D965 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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D965 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  D965 NPN General Purpose Transistor Elektronische Bauelemente 17-Nov-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Audio amplifier Flash unit of camera Switching circuit CLASSIFICATION OF hFE(2) Rank R T V Range 340 - 600 560 - 950 900 - 2000 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 42 V Collector - Emitter Voltage VCEO 22 V Emitter - Base Voltage VEBO 6 V Collector Current -Continuous IC 5 A Cpllector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector - Base Breakdown Voltage V(BR)CBO 42 - - V IC = 0.1mA, IE = 0 Collector - Emitter Breakdown Voltage V(BR)CEO 22 - - V IC = 1 mA, IB = 0 Emitter - Base Breakdown Voltage V(BR)EBO 6 - - V IE = 10 μA, IC = 0 Collector Cut - Off Current ICBO - - 0.1 A VCB = 30V, IE = 0 Emitter Cut - Off Current IEBO - - 0.1 A VEB = 6V, IC = 0 DC Current Gain hFE(1) 150 - - VCE = 2V, IC = 0.15 mA hFE(2) 340 - 2000 VCE = 2V, IC = 500 mA hFE(3) 150 - - VCE = 2V, IC = 2A Collector - Emitter Saturation Voltage VCE(sat) - - 0.35 V IC = 3000mA, IB = 100 mA Transition Frequency f T - 150 - MHz VCE = 6V, IC = 50 mA, f = 30MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 Emitter Collector Base |
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