 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
RFP2P10 Datasheet(PDF) 2 Page - Intersil Corporation |
|
|
|||||||||||||||||||||||||||||
RFP2P10 Datasheet(HTML) 2 Page - Intersil Corporation |
|
|
2 / 5 page  2 RFP2P08 RFP2P10 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -80 -100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR -80 -100 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 2 5 2 5 A A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 0.2 25 0.2 W W/oCaaa Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = -250 µA, VGS = 0 RFP2P08 -80 - - V RFP2P10 -100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2--4 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -1 µA VDS = 0.8 x Rated BVDSS,VGS = 0V, TC = 125 oC - - -25 µA Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = -2A, VGS = -10V (Figures 6, 7) - - 3.500 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = -2A, VGS = -10V - - -7.0 V Turn-On Delay Time td(ON) ID = ≈ 1A, VDD = -50V, RG = 50Ω, VGS = -10V, RL = 46.5Ω (Figures 10, 11, 12) - 7 25 ns Rise Time tr -15 45 ns Turn-Off Delay Time td(OFF) -14 45 ns Fall Time tf -11 25 ns Input Capacitance CISS VGS = 0V, VDS = -25V, f =1MHz (Figure 9) - - 150 pF Output Capacitance COSS - - 80 pF Reverse Transfer Capacitance CRSS - - 30 pF Thermal Resistance Junction to Case RθJC -- 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = -1A - - -1.4 V Diode Reverse Recovery Time trr ISD = -2A, dISD/dt = 50A/µs - 135 - ns NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFP2P08, RFP2P10 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
