P45N02 datasheet(2/8 Pages) INTERSIL

2 / 8 page

RFP45N02L, RF1S45N02L, RF1S45N02LSM

Absolute Maximum Ratings TC = 25oC Unless Otherwise Speciﬁed

RFP45N02L, RF1S45N02L,

RF1S45N02LSM

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

Drain Current

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.606

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,TSTG

-55 to 175

Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA1

Zero Gate Voltage Drain Current

IDSS

VDS = 20V,

VGS = 0V

TC = 25

oC-

µA

TC = 150

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

±100

Drain to Source On Resistance

rDS(ON)

ID = 45A, VGS = 5V

0.022

Ω

Turn-On Time

tON

VDD = 15V, ID ≅ 45A,

RL = 0.33Ω, VGS = 5V,

RGS = 5Ω

260

Turn-On Delay Time

td(ON)

-15-

Rise Time

160

Turn-Off Delay Time

td(OFF)

-20-

Fall Time

-20-

Turn-Off Time

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 16V,

ID ≅ 45A,

RL = 0.35Ω

-50

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

1.5

1.8

Input Capacitance

CISS

VDS = 15V, VGS = 0V,

f = 1MHz

1300

Output Capacitance

COSS

724

Reverse Transfer Capacitance

CRSS

250

Thermal Resistance Junction to Case

RθJC

1.65

oC/W

Thermal Resistance Junction to Ambient

RθJA

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 45A

1.5

Reverse Recovery Time

trr

ISD = 45A, dISD/dt = 100A/µs

125

RFP45N02L, RF1S45N02L, RF1S45N02LSM

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