DATA SHEET

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Document No. P15657EJ1V0DS00 (1st edition)

Date Published August 2001 NS CP(K)

NPN SILICON RF TRANSISTOR

NE677M04 / 2SC5751

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

FEATURES

• Ideal for medium output power amplification

• High reliability through use of gold electrodes

• Flat-lead 4-pin thin-type super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NE677M04-A

2SC5751

-A

50 pcs (Non reel)

• 8 mm wide embossed taping

NE677M04-T2-A

2SC5751-T2

-A

3 kpcs/reel

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples,

please contact your nearby sales office.

Unit sample quantity is 50 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

9.0

V

Collector to Emitter Voltage

6.0

V

Emitter to Base Voltage

2.0

V

Collector Current

50

mA

Total Power Dissipation

Note

205

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

JEITA

Part No.