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BAS86 Datasheet(PDF) 1 Page - SUNMATE electronic Co., LTD |
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BAS86 Datasheet(HTML) 1 Page - SUNMATE electronic Co., LTD |
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1 / 2 page  200mA Surface Mount Schottky Barrier Diode BAS86 SOD-80 Glass case 1 of 2 Features · · · Features · Mechanical Data A C B Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm @ TA = 25 °C unless otherwise specified Maximum Ratings and Electrical Characteristics · SOD-80 · Case: · · · Component in accordance to RoHS 2002/95/EC Lead (Pb)-free component The low forward voltage drop and fast switching Metal-on-silicon Schottky barrier device which is This diode features low turn-on voltage. For general purpose applications The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. protected by a PN junction guard ring. make it ideal for protection of MOS devices, steer- ing, biasing and coupling diodes for fast switching and low logic level applications and WEEE 2002/96/EC Weight: approx. 31 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box 1) Valid provided that electrodes are kept at ambient temperature Parameter Test condition Symbol Value Unit Continuous reverse voltage VR 50 V Forward continuous current Tamb = 25 °C IF 2001) mA Repetitive peak forward current tp < 1 s, Tamb = 25 °C, ν ≤ 0.5 IFRM 5001) mA Power dissipation1) Tamb = 25 °C Ptot 2001) mW Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 50 V Leakage current VR = 40 V IR 5µA Forward voltage Pulse test tp < 300 µs, IF = 0.1 mA, δ < 2 % VF 200 300 mV Pulse test tp < 300 µs, IF = 1 mA, δ < 2 % VF 275 380 mV Pulse test tp < 300 µs, IF = 10 mA, δ < 2 % VF 365 450 mV Pulse test tp < 300 µs, IF = 30 mA, δ < 2 % VF 460 600 mV Pulse test tp < 300 µs, IF = 100 mA, δ < 2 % VF 700 900 mV Diode capacitance VR = 1 V, f = 1 MHz Ctot 8pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, trr 5ns |
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