350mA Axial Leaded Schottky Barrier Diode

35

of 2

1

Features

·

·

Mechanical Data

·

·

Case: DO-

Glass Case

A

A

B

C

D

DO-35

Dim

Min

Max

A

25.40

¾

B

¾

4.00

C

¾

0.60

D

¾

2.00

All Dimensions in mm

BAT48

For general purpose applications

These diodes feature very low turn-on voltage and

fast switching. These devices are protected by a

PN junction guard ring against excessive voltage,

such as electrostatic discharges

This diode is also available in the Mini-MELF case

with type designations LL48

Pb / RoHS Free

·

Weight: approx. 0.13g

·

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

40

V

Continuous Forward Current

350

(1)

mA

Repetitive Peak Forward Current at tp < 1s,

1

(1)

A

Forward Surge Current at tp < 10 ms,

7.5

(1)

A

Power Dissipation ,Ta = 65

°C

330

(1)

mW

Thermal Resistance Junction to Ambient Air

300

(1)

°C/W

Junction Temperature

125

°C

Ambient Operating Temperature Range

Ta

-65 to + 125

°C

Storage temperature range

-65 to + 150

°C

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.

Parameter

Parameter

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

40

-

-

V

Reverse Current

-

-

2

Pulse Test tp <300

µs , δ <2%

-

-

5

-

-

25

-

-

0.30

Forward Voltage

-

-

0.40

Pulse Test tp <300

µs , δ <2%

-

-

0.50

-

-

0.75

-

-

0.90

Diode Capacitance

Cd

-

12

-

pF

V

µA

Test Condition