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LL101A Datasheet(PDF) 2 Page - SUNMATE electronic Co., LTD |
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LL101A Datasheet(HTML) 2 Page - SUNMATE electronic Co., LTD |
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2 / 2 page  2 of 2 Parameter Test condition Part Symbol Min Typ. Max Unit Reverse Breakdown Voltage IR = 10 µA LL101A V(BR)R 60 V LL101B V(BR)R 50 V LL101C V(BR)R 40 V Leakage current VR = 50 V LL101A IR 200 nA VR = 50V LL101B IR 200 nA VR = 50 V LL101C IR 200 nA Forward voltage drop IF = 1 mA LL101A VF 410 mV IF = 1mA LL101B VF 400 mV IF = 1 mA LL101C VF 390 mV IF = 15 mA LL101A VF 1000 mV LL101B VF 950 mV LL101C VF 900 mV Diode capacitance VR = 0 V, f = 1 MHz LL101A CD 2.0 pF VR = 0 V, f = 1 MHz LL101B CD 2.1 pF LL101C CD 2.2 pF Reverse recovery time IF = IR = 5 mA, recover to 0.1 IR trr 1ns Figure 1. Typ. IF vs. VF for primary conduction through the Schottky barrier gll101a_01 Figure 2. Typ. IF of combination Schottky barrrier and PN junction guard ring gll101a_02 Figure 3. Typical Variation of Reverse Current at Various Temperatures gll101a_03 Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage gll101a_04 |
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