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3N191 Datasheet(PDF) 2 Page - Calogic, LLC

Part # 3N191
Description  Dual P-Channel Enhancement Mode MOSFET
PDF  2 Pages
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Manufacturer  CALOGIC [Calogic, LLC]
Direct Link  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

3N191 Datasheet(HTML) 2 Page - Calogic, LLC

  3N191 Datasheet HTML 1Page - Calogic, LLC 3N191 Datasheet HTML 2Page - Calogic, LLC  
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3N190 / 3N191
LLC
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25
oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
3N190/91
UNITS
TEST CONDITIONS
MIN MAX
gfs
Forward Transconductance (Note 3)
1500 4000
µS
VDS = -15V, ID = -10mA
f = 1kHz
Yos
Output Admittance
300
Ciss
Input Capacitance Output Shorted (Note 5)
4.5
pF
f = 1MHz
Crss
Reverse Transfer Capacitance (Note 5)
1.0
Coss
Output Capacitance Input Shorted (Note 5)
3.0
SWITCHING CHARACTERISTICS (TA = 25
oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
td(on)
Turn On Delay Time
15
ns
VDD = -15V, ID = -10mA, RG = RL = 1.4k
Ω (Note 5)
tr
Rise Time
30
toff
Turn Off Time
50
MATCHING CHARACTERISTICS (TA = 25
oC and VBS = 0 unless otherwise specified) 3N188 and 3N190
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
Yfs1 / Yfs2
Forward Transconductance Ratio
0.85
1.0
VDS = -15V, ID = -500
µA, f = 1kHz
VGS1-2
Gate Source Threshold Voltage Differential
100
mV
VDS = -15V, ID = -500
µA
∆VGS1−2
∆T
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
100
µV/oC
VDS = -15V, ID = -500
µA,
T = -55
oC to +25oC
∆VGS1−2
∆T
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
100
µV/oC
VDS = -15V, ID = -500
µA
T = +25
oC to +125oC
NOTES: 1. Per transistor.
2. Approximately doubles for every 10
oC increase in TA.
3. Pulse test duration = 300
µs; duty cycle ≤3%.
4. Measured at end points, TA and TB.
5. For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS021 REV A



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