IRF1010N

3/16/01

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.85

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

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1

‡

S

D

G

TO-220AB

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts.

The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

Description

PD - 91278

Absolute Maximum Ratings

Parameter

Max.

Units

85

‡

60

A

Pulsed Drain Current



290

Power Dissipation

180

W

Linear Derating Factor

1.2

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



43

A

Repetitive Avalanche Energy



18

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

3.6

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)