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IRF3205PBF. Datasheet(PDF) 1 Page - International Rectifier

Part # IRF3205PBF.
Description  Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF3205PBF. Datasheet(HTML) 1 Page - International Rectifier

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IRF3205
HEXFET® Power MOSFET
01/25/01
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
www.irf.com
1
VDSS = 55V
RDS(on) = 8.0mΩ
ID = 110A…
S
D
G
TO-220AB
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
110
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
80
A
IDM
Pulsed Drain Current

390
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

62
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
PD-91279E


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