IRF3709 datasheet(1/11 Pages) IRF

Part #	IRF3709

Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 11 page

www.irf.com

1

02/20/01

Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-to-Source Voltage

± 20

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

90

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

57

A

IDM

Pulsed Drain Current

360

PD @TC = 25°C

Maximum Power Dissipation

120

W

PD @TA = 25°C

Maximum Power Dissipation

3.1

W

Linear Derating Factor

0.96

mW/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

IRF3709

IRF3709S

IRF3709L

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on) max

ID

30V

9.0m

Ω

90A

Notes

through are on page 11

Absolute Maximum Ratings

D2Pak

IRF3709S

TO-220AB

IRF3709

TO-262

IRF3709L

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.04

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

RθJA

Junction-to-Ambient (PCB mount)

–––

40

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V VGS

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

PD - 94071

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IRF3709 Datasheet(PDF) 1 Page - International Rectifier

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