IRF3808 datasheet(2/9 Pages) IRF

2 / 9 page

IRF3808

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VVGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.086 –––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

5.9

7.0

Ω

VGS = 10V, ID = 82A

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

VDS = 10V, ID = 250µA

gfs

Forward Transconductance

100

–––

SVDS = 25V, ID = 82A

–––

µA

VDS = 75V, VGS = 0V

–––

250

VDS = 60V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

200

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-200

VGS = -20V

Total Gate Charge

–––

150

220

ID = 82A

Qgs

Gate-to-Source Charge

–––

VDS = 60V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 10V

td(on)

Turn-On Delay Time

–––

VDD = 38V

Rise Time

–––

140

–––

ID = 82A

td(off)

Turn-Off Delay Time

–––

RG = 2.5Ω

Fall Time

–––

120

–––

VGS = 10V

Between lead,

–––

6mm (0.25in.)

from package

and center of die contact

Ciss

Input Capacitance

–––

5310 –––

VGS = 0V

Coss

Output Capacitance

–––

890

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

130

–––

ƒ = 1.0MHz, See Fig. 5

Coss

Output Capacitance

–––

6010 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss

Output Capacitance

–––

570

–––

VGS = 0V, VDS = 60V, ƒ = 1.0MHz

Coss eff.

Effective Output Capacitance

–––

1140 –––

VGS = 0V, VDS = 0V to 60V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

–––

IGSS

4.5

7.5

IDSS

Drain-to-Source Leakage Current

Q Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

R Starting TJ = 25°C, L = 0.130mH

RG = 25Ω, IAS = 82A. (See Figure 12).

S ISD ≤ 82A, di/dt ≤ 310A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

T Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C, IS = 82A, VGS = 0V

trr

Reverse Recovery Time

–––

140

TJ = 25°C, IF = 82A

Qrr

Reverse RecoveryCharge

–––

340

510

di/dt = 100A/µsT

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

140

550

U Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

VCalculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

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