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IRF5803D2 Datasheet(PDF) 2 Page - International Rectifier |
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IRF5803D2 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF5803D2 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– -2.0 ISM Pulsed Source Current (Body Diode) ––– ––– -27 VSD Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 27 40 ns TJ = 25°C, IF = -2.0A Qrr Reverse Recovery Charge ––– 34 50 nC di/dt = 100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units Conditions If (av) Max. Average Forward Current 3.0 50% Duty Cycle. Rectangular Waveform, TA =30°C See Fig.21 ISM Max. peak one cycle Non-repetitive 340 5µs sine or 3µs Rect. pulse Following any rated Surge current 70 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied A Schottky Diode Maximum Ratings A Parameter Max. Units Conditions Vfm Max. Forward Voltage Drop 0.51 If = 5.0A, Tj = 25°C 0.63 If = 10A, Tj = 25°C 0.44 If = 5.0A, Tj = 125°C 0.59 If = 10A, Tj = 125°C Vrrm Max. Working Peak Reverse Voltage 40 Irm Max. Reverse Leakage Current 3.0 mA Vr = 40V Tj = 25°C 37 Tj = 125°C Schottky Diode Electrical Specifications V V Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.03 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 112 VGS = -10V, ID = -3.4A ––– ––– 190 VGS = -4.5V, ID = -2.7A VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 4.0 ––– ––– SVDS = -10V, ID = -3.4A ––– ––– -10 VDS = -32V, VGS = 0V ––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 25 37 ID = -3.4A Qgs Gate-to-Source Charge ––– 4.5 6.8 nC VDS = -20V Qgd Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = -10V, See Fig. 6 & 14 td(on) Turn-On Delay Time ––– 43 65 VDD = -20V tr Rise Time ––– 550 825 ID = -1.0A td(off) Turn-Off Delay Time ––– 88 130 RG = 6.0Ω tf Fall Time ––– 50 75 VGS = -10V, Ciss Input Capacitance ––– 1110 ––– VGS = 0V Coss Output Capacitance ––– 93 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 73 ––– ƒ = 100kHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Ct Max. Junction Capacitance 405 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C |
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