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IRF5804 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF5804
Description  Power MOSFET(Vdss=-40V)
PDF  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF5804 Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-40
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-2.5
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-2.0
A
IDM
Pulsed Drain Current

-10
PD @TA = 25°C
Power Dissipation
ƒ
2.0
PD @TA = 70°C
Power Dissipation
ƒ
1.3
Linear Derating Factor
0.016
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
10/04/01
www.irf.com
1
IRF5804
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
62.5
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
VDSS
RDS(on) max (mΩ)
Ω)
Ω)
Ω)
Ω)
ID
-40V
198@VGS = -10V
-2.5A
334@VGS = -4.5V
-2.0A
TSOP-6
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
T op V iew
1
2
D
G
A
D
D
D
S
3
4
5
6
PD - 94333


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