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IRF5852 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF5852
Description  Power MOSFET(Vdss=20V)
PDF  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF5852 Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
2.7
ID @ TA= 70°C
Continuous Drain Current, VGS @ 4.5V
2.2
A
IDM
Pulsed Drain Current

11
PD @TA = 25°C
Power Dissipation
ƒ
0.96
PD @TA = 70°C
Power Dissipation
ƒ
0.62
Linear Derating Factor
7.7
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
3/1/01
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
130
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
IRF5852
HEXFET® Power MOSFET
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
Description
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD - 93999
TSOP-6
Top View
VDSS
RDS(on) max (Ω)
Ω)
Ω)
Ω)
Ω)
ID
20 V
0.090@VGS = 4.5V
2.7A
0.120@VGS = 2.5V
2.2A
S2
G2
G1
3
2
1
4
5
6D1
D2
S1


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