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IRF7103 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7103 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  HEXFET® Power MOSFET PD - 9.1095B l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. IRF7103 SO-8 D1 D1 D2 D2 G1 S2 G2 S1 Top V iew 8 1 2 3 4 5 6 7 VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A 8/25/97 Parameter Min. Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– ––– 62.5 °C/W Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.3 IDM Pulsed Drain Current 10 PD @TC = 25°C Power Dissipation 2.0 Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 4.5 V/nS TJ,TSTG Junction and Storage Temperature Range -55 to + 150 Absolute Maximum Ratings A Thermal Resistance Ratings W °C |
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