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IRF7453 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7453
Description  Power MOSFET(Vdss=250V, Id=2.2A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7453 Datasheet(HTML) 2 Page - International Rectifier

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IRF7453
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
1.8
–––
–––
S
VDS = 50V, ID = 1.3A
Qg
Total Gate Charge
–––
25
38
ID = 1.3A
Qgs
Gate-to-Source Charge
–––
6.0
9.0
nC
VDS = 200V
Qgd
Gate-to-Drain ("Miller") Charge
–––
11
17
VGS = 10V,
td(on)
Turn-On Delay Time
–––
9.0
–––
VDD = 125V
tr
Rise Time
–––
2.5
–––
ID = 1.3A
td(off)
Turn-Off Delay Time
–––
19
–––
RG = 6.0Ω
tf
Fall Time
–––
20
–––
VGS = 10V
ƒ
Ciss
Input Capacitance
–––
930
–––
VGS = 0V
Coss
Output Capacitance
–––
130
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
23
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1050 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
52
–––
VGS = 0V, VDS = 200V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
96
–––
VGS = 0V, VDS = 0V to 200V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
200
mJ
IAR
Avalanche Current

–––
2.2
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 1.3A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
98
150
ns
TJ = 25°C, IF = 1.3A
Qrr
Reverse RecoveryCharge
–––
340
510
nC
di/dt = 100A/µs
ƒ
Diode Characteristics
2.3
17
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
250
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.33
–––
V/°C
Reference to 25°C, ID = 1mA
ƒ
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.23
Ω
VGS = 10V, ID = 1.3A
ƒ
VGS(th)
Gate Threshold Voltage
3.0
–––
5.5
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 250V, VGS = 0V
–––
–––
250
VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 24V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -24V
IGSS
IDSS
Drain-to-Source Leakage Current



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