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IRF7460 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7460
Description  Power MOSFET(Vdss=20V, Id=12A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7460 Datasheet(HTML) 2 Page - International Rectifier

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IRF7460
2
www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
S
D
G
Diode Characteristics
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
26
–––
–––
S
VDS = 16V, ID = 9.6A
Qg
Total Gate Charge
–––
19
–––
ID = 9.6A
Qgs
Gate-to-Source Charge
–––
6.9
–––
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.0
–––
VGS = 4.5V,
„
Qoss
Output Gate Charge
–––
17
26
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 10V
tr
Rise Time
–––
6.9
–––
ID = 9.6A
td(off)
Turn-Off Delay Time
–––
12
–––
RG = 1.8Ω
tf
Fall Time
–––
4.3
–––
VGS = 4.5V
„
Ciss
Input Capacitance
–––
2050 –––
VGS = 0V
Coss
Output Capacitance
–––
1060 –––
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
150
–––
pF
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.089
–––
V/°C
Reference to 25°C, ID = 1mA
–––
7.2
10
VGS = 10V, ID = 12A
„
–––
10.5
14
VGS = 4.5V, ID = 9.6A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Ω
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.8
1.3
V
TJ = 25°C, IS = 9.6A, VGS = 0V
„
–––
0.66
–––
TJ = 125°C, IS = 9.6A, VGS = 0V
„
trr
Reverse Recovery Time
–––
44
66
ns
TJ = 25°C, IF = 9.6A, VR=10V
Qrr
Reverse Recovery Charge
–––
60
90
nC
di/dt = 100A/µs
„
trr
Reverse Recovery Time
–––
44
66
ns
TJ = 125°C, IF = 9.6A, VR=10V
Qrr
Reverse Recovery Charge
–––
64
96
nC
di/dt = 100A/µs
„
2.3
100
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
240
mJ
IAR
Avalanche Current

–––
9.6
A
Avalanche Characteristics



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