IRF7467 datasheet(1/8 Pages) IRF

Part #	IRF7467

Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=11A)

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 8 page

IRF7467

SMPS MOSFET

Notes

through are on page 8

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-to-Source Voltage

± 12

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

11

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

9.0

A

IDM

Pulsed Drain Current

90

PD @TA = 25°C

Maximum Power Dissipation

2.5

W

PD @TA = 70°C

Maximum Power Dissipation

1.6

W

Linear Derating Factor

0.02

W/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

HEXFET® Power MOSFET

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

Benefits

Applications

VDSS

RDS(on) max

ID

30V

12m

Ω

11A

www.irf.com

1

3/25/01

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V VGS

l Fully Characterized Avalanche Voltage

and Current

SO-8

To p V ie w

8

1

2

3

4

5

6

7

D

G

S

A

S

A

Symbol

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

–––

20

RθJA

Junction-to-Ambient

–––

50

°C/W

Thermal Resistance

l High Frequency Buck Converters for

Computer Processor Power

PD - 93883B

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