IRF7507 datasheet(2/8 Pages) IRF

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IRF7507

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Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

VGS = 0V, ID = 250µA

P-Ch -20

—

VGS = 0V, ID = -250µA

N-Ch

—

0.041

—

Reference to 25°C, ID = 1mA

P-Ch

— -0.012 —

Reference to 25°C, ID = -1mA

— 0.085 0.14

VGS = 4.5V, ID = 1.7A

— 0.120 0.20

VGS = 2.7V, ID = 0.85A

—

0.17 0.27

VGS = -4.5V, ID =-1.2A

—

0.28 0.40

VGS = -2.7V, ID =-0.6A

N-Ch 0.7

—

VDS = VGS, ID = 250µA

P-Ch -0.7

—

VDS = VGS, ID = -250µA

N-Ch 2.6

—

VDS = 10V, ID = 0.85A

P-Ch 1.3

—

VDS = -10V, ID = -0.6A

N-Ch

—

1.0

VDS = 16 V, VGS = 0V

P-Ch

—

-1.0

VDS = -16V, VGS = 0V

N-Ch

—

VDS = 16 V, VGS = 0V, TJ = 125°C

P-Ch

—

-25

VDS = -16V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

N-P

––

—

±100

VGS = ± 12V

N-Ch

––

5.3

8.0

P-Ch

—

5.4

8.2

N-Ch

––

0.84

1.3

P-Ch

—

0.96

1.4

N-Ch

––

2.2

3.3

P-Ch

—

2.4

3.6

N-Ch

—

5.7

—

P-Ch

—

9.1

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

260

—

P-Ch

—

240

—

N-Ch

—

130

—

P-Ch

—

130

—

N-Ch

—

P-Ch

—

V(BR)DSS

Drain-to-Source Breakdown Voltage

∆V

(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 21 )

Notes:

N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

1.25

P-Ch

—

-1.25

N-Ch

—

P-Ch

—

-14

N-Ch

—

1.2

TJ = 25°C, IS = 1.7A, VGS = 0V

P-Ch

—

-1.2

TJ = 25°C, IS = -1.2A, VGS = 0V

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Source-Drain Ratings and Characteristics

V/°C

Ω

µA

N-Channel

ID = 1.7A, VDS = 16V, VGS = 4.5V

P-Channel

ID = -1.2A, VDS = -16V, VGS = -4.5V

N-Channel

VDD = 10V, ID = 1.7A, RG = 6.0Ω,

RD = 5.7Ω

P-Channel

VDD = -10V, ID = -1.2A, RG = 6.0Ω,

RD = 8.3Ω

N-Channel

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

N-Ch

P-Ch

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Channel

TJ = 25°C, IF = 1.7A, di/dt = 100A/µs

P-Channel

TJ = 25°C, IF = -1.2A, di/dt = -100A/µs

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 10sec.

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