IRF7509 datasheet(2/8 Pages) IRF

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IRF7509

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Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

VGS = 0V, ID = 250µA

P-Ch -30

—

VGS = 0V, ID = -250µA

N-Ch

— 0.059

—

Reference to 25°C, ID = 1mA

P-Ch

— -0.039 —

Reference to 25°C, ID = -1mA

—

0.09 0.110

VGS = 10V, ID = 1.7A

—

0.14 0.175

VGS = 4.5V, ID = 0.85A

—

0.17 0.20

VGS = -10V, ID =-1.2A

—

0.30 0.40

VGS = -4.5V, ID =-0.6A

N-Ch 1.0

—

VDS = VGS, ID = 250µA

P-Ch -1.0

—

VDS = VGS, ID = -250µA

N-Ch 1.9

—

VDS = 10V, ID = 0.85A

P-Ch 0.92

—

VDS = -10V, ID = -0.6A

N-Ch

—

1.0

VDS = 24 V, VGS = 0V

P-Ch

—

-1.0

VDS = -24V, VGS = 0V

N-Ch

—

VDS = 24 V, VGS = 0V, TJ = 125°C

P-Ch

—

-25

VDS = -24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

N-P

––

—

±100

VGS = ± 20V

N-Ch

––

7.8

P-Ch

—

7.5

N-Ch

––

1.2

1.8

P-Ch

—

1.3

1.9

N-Ch

––

2.5

3.8

P-Ch

—

2.5

3.7

N-Ch

—

4.7

—

P-Ch

—

9.7

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

N-Ch

—

5.3

—

P-Ch

—

9.3

—

N-Ch

—

210

—

P-Ch

—

180

—

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

V(BR)DSS

Drain-to-Source Breakdown Voltage

∆V

(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 21 )

Notes:

N-Channel I

SD ≤ 1.7A, di/dt ≤ 120A/µs, V

DD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

—

1.25

P-Ch

—

-1.25

N-Ch

—

P-Ch

—

-16

N-Ch

—

1.2

TJ = 25°C, IS = 1.7A, VGS = 0V

P-Ch

—

-1.2

TJ = 25°C, IS = -1.8A, VGS = 0V

N-Ch

—

P-Ch

—

N-Ch

—

P-Ch

—

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Source-Drain Ratings and Characteristics

V/°C

Ω

µA

N-Channel

ID = 1.7A, VDS = 24V, VGS = 10V

P-Channel

ID = -1.2A, VDS = -24V, VGS = -10V

N-Channel

VDD = 15V, ID = 1.7A, RG = 6.1Ω,

RD = 8.7Ω

P-Channel

VDD = -15V, ID = -1.2A, RG = 6.2Ω,

RD = 12Ω

N-Channel

VGS = 0V, VDS = 25V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -25V, ƒ = 1.0MHz

N-Ch

P-Ch

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Channel

TJ = 25°C, IF = 1.7A, di/dt = 100A/µs

P-Channel

TJ = 25°C, IF = -1.2A, di/dt = -100A/µs

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 10sec.

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