PD - 93940

IRF7701

Parameter

Max.

Units

Drain- Source Voltage

-12

V

±10

±8.0

A

Pulsed Drain Current



±80

Power Dissipation

1.5

Power Dissipation

0.96

Linear Derating Factor

12

mW/°C

Gate-to-Source Voltage

± 8.0

V

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

83

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

6/21/00

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design , that Inter-

national Rectifier is well known for,

provides thedesigner

with an extremely efficient and reliable device for use

in battery and load management.

The TSSOP-8 package, has 45% less footprint area of the

standard SO-8. This makes the TSSOP-8 an ideal device

for applications where printed circuit board space is at a

premium.

The low profile (<1.1mm) of the TSSOP-8 will allow it to fit

easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

Description

TSSOP-8

-10A

-12V

-8.5A

-7.0A

4 = G

3 = S

2 = S

1 = D

1

2

3

4

G

D

S

5

6

7

8

8 = D

7 = S

6 = S

5 = D