and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Converters up to 5A Output

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier

FETKY™ MOSFET / SCHOTTKY DIODE

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

R

θJA

50

°C/W

Thermal Resistance

Description

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications. HEXFET power

MOSFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combining this technology with International Rectifier’s

low forward drop Schottky rectifiers results in an extremely

efficient device suitable for use in a wide variety of

portable electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Top View

8

1

2

3

4

5

6

7

A/S

A/S

A/S

G

K/D

K/D

D

K/D

K/D

IRF7807D2

PD- 93762

www.irf.com

1

11/8/99

IRF7807D2

V

DS

30V

R

25m

Ω

Q

g

14nC

Q

SW

5.2nC

Q

oss

21.6nC

Device Features (Max Values)

SO-8

Parameter

Symbol

Max.

Units

Drain-Source Voltage

V

DS

30

Gate-Source Voltage

V

GS

±12

Continuous Drain or Source

25°C

I

D

8.3

Current (V

70°C

6.6

A

Pulsed Drain Current



I

DM

66

Power Dissipation

25°C

P

D

2.5

70°C

1.6

Schottky and Body Diode

25°C

I

3.7

A

Average ForwardCurrent

„

70°C

2.3

Junction & Storage Temperature Range

T

–55 to 150

°C

Absolute Maximum Ratings

V

W