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IRF840LCL Datasheet(PDF) 2 Page - International Rectifier |
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IRF840LCL Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF840LCS/LCL 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)
––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time ––– 490 740 ns TJ = 25°C, IF = 8.0A Qrr Reverse Recovery Charge ––– 3.0 4.5 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Starting T J = 25°C, L = 14mH RG = 25Ω, IAS = 8.0A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: I SD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF840LC data and test conditions ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended soldering techniques refer to application note #AN-994. S D G Source-Drain Ratings and Characteristics 8.0 28 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.85 Ω VGS = 10V, ID = 4.8A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 4.0 ––– ––– S VDS = 50V, ID = 4.8A ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 39 ID = 8.0A Qgs Gate-to-Source Charge ––– ––– 10 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 250V tr Rise Time ––– 25 ––– ID = 8.0A td(off) Turn-Off Delay Time ––– 27 ––– RG = 9.1Ω tf Fall Time ––– 19 ––– RD = 30Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1100 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 18 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance |
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