IRF9230

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction to Case

—

—

1.67

RthJA

Junction-to-Ambient

—

—

30

Soldered to a 2” square copper-clad board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-6.5

ISM

Pulse Source Current (Body Diode) ➀

—

—

-28

VSD

Diode Forward Voltage

—

—

-6.0

V

trr

Reverse Recovery Time

—

—

400

nS

Tj = 25°C, IF =-6.5A, di/dt ≤-100A/µs

QRR

Reverse Recovery Charge

—

—

4.0

µc

VDD ≤-50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.20

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.80

VGS =-10V, ID =-4.0A➃

Resistance

—

—

0.92

VGS =-10V, ID =-6.5A ➃

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID =-250µA

gfs

Forward Transconductance

2.0

—

—

S ( )

VDS >-15V, IDS =-4.0A➃

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS=-160V, VGS=0V

—

—

-250

VDS =-160V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS =-20V

IGSS

Gate-to-Source Leakage Reverse

—

—

1 0 0

VGS =-20V

Qg

Total Gate Charge

—

—

3 1

VGS =-10V, ID=-6.5A

Qgs

Gate-to-Source Charge

—

—

7.0

nC

VDS =-100V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

1 7

Turn-On Delay Time

—

—

5 0

VDD =-100V, ID =-6.5A,

t r

Rise Time

—

—

1 0 0

RG =7.5Ω

Turn-Off Delay Time

—

—

100

tf

Fall Time

—

—

8 0

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

700

VGS = 0V, VDS =25V

Coss

Output Capacitance

—

200

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

4 0

—

nA

nH

ns

µA

Ω

Measured from the center of

drain pad to center of source

pad