Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

IRF9540 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF9540
Description  Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF9540 Datasheet(HTML) 1 Page - International Rectifier

  IRF9540 Datasheet HTML 1Page - International Rectifier IRF9540 Datasheet HTML 2Page - International Rectifier IRF9540 Datasheet HTML 3Page - International Rectifier IRF9540 Datasheet HTML 4Page - International Rectifier IRF9540 Datasheet HTML 5Page - International Rectifier IRF9540 Datasheet HTML 6Page - International Rectifier IRF9540 Datasheet HTML 7Page - International Rectifier IRF9540 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
IRF9540N
HEXFET® Power MOSFET
PD - 91437B
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-23
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-16
A
IDM
Pulsed Drain Current

-76
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
0.91
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
430
mJ
IAR
Avalanche Current

-11
A
EAR
Repetitive Avalanche Energy

14
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
-5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = -100V
RDS(on) = 0.117Ω
ID = -23A
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
5/13/98
S
D
G
TO-220AB
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.


Similar Part No. - IRF9540

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor		 IRF9540 SAMSUNG-IRF9540 Datasheet
508Kb / 12P		 P-CHANNEL POWER MOSFETS
logo
Intersil Corporation		 IRF9540 INTERSIL-IRF9540 Datasheet
59Kb / 7P		 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
July 1999
logo
Harris Corporation		 IRF9540 HARRIS-IRF9540 Datasheet
424Kb / 7P		 P-CHANNEL POWER MOSFETS
logo
Samsung semiconductor		 IRF9540 SAMSUNG-IRF9540 Datasheet
381Kb / 6P		 P-CHANNEL POWER MOSFETS
logo
Vishay Siliconix		 IRF9540 VISHAY-IRF9540 Datasheet
1Mb / 8P		 Power MOSFET
20-Jun-08
More results

Similar Description - IRF9540

ManufacturerPart #DatasheetDescription
logo
International Rectifier		 IRF5EA1310 IRF-IRF5EA1310 Datasheet
238Kb / 7P		 POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
IRF5NJ9540 IRF-IRF5NJ9540 Datasheet
117Kb / 7P		 POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
IRF5Y9540CM IRF-IRF5Y9540CM Datasheet
105Kb / 7P		 POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
IRF9540NS IRF-IRF9540NS Datasheet
187Kb / 10P		 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRFP23N50L IRF-IRFP23N50L Datasheet
104Kb / 8P		 Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)
IRFP254N IRF-IRFP254N Datasheet
222Kb / 8P		 Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)
IRFP360 IRF-IRFP360 Datasheet
164Kb / 6P		 Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
IRFP360LC IRF-IRFP360LC Datasheet
343Kb / 8P		 Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
IRFP9140N IRF-IRFP9140N Datasheet
142Kb / 8P		 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540NSPBF IRF-IRF9540NSPBF Datasheet
331Kb / 11P		 HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com