Parameter

Max.

Units

0.45

0.29

A

Pulsed Drain Current

3.6

Power Dissipation

1.0

W

Linear Derating Factor

0.0083

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

57

mJ

Avalanche Current

0.45

A

Repetitive Avalanche Energy

0.10

mJ

dv/dt

Peak Diode Recovery dv/dt

4.8

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

IRFD214

PD -9.1271

Revision 0

Absolute Maximum Ratings

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Junction-to-Ambient

—

—

120

°C/W

Dynamic dv/dt Rating

Repetitive Avalanche Rated

For Automatic Insertion

End Stackable

Fast Switching

Ease of paralleling

Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The 4-pin DIP package is a low-cost machine-insertable case style which can be

stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain

serves as a thermal link to the mounting surface for power dissipation levels up to

1 watt.

Description

A

HD-1

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