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IRFIB7N50A Datasheet(PDF) 1 Page - International Rectifier

Part # IRFIB7N50A
Description  Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFIB7N50A Datasheet(HTML) 1 Page - International Rectifier

  IRFIB7N50A Datasheet HTML 1Page - International Rectifier IRFIB7N50A Datasheet HTML 2Page - International Rectifier IRFIB7N50A Datasheet HTML 3Page - International Rectifier IRFIB7N50A Datasheet HTML 4Page - International Rectifier IRFIB7N50A Datasheet HTML 5Page - International Rectifier IRFIB7N50A Datasheet HTML 6Page - International Rectifier IRFIB7N50A Datasheet HTML 7Page - International Rectifier IRFIB7N50A Datasheet HTML 8Page - International Rectifier  
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6/15/99
www.irf.com
1
IRFIB7N50A
SMPS MOSFET
HEXFET® Power MOSFET
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS
‡
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
VDSS
Rds(on) max
ID
500V
0.52
Ω
6.6A
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
Notes
 through ‡are on page 8
S
D
G
l Half & Full Bridge Convertors
TO-220 FULLPAK
l Power Factor Correction Boost
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
6.6
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
4.2
A
IDM
Pulsed Drain Current
†
44
PD @TC = 25°C
Power Dissipation
60
W
Linear Derating Factor
0.48
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
Ġ
6.9
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
PD - 91810


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