Product Summary

Part Number

IRFN150

100V

0.060

Ω

34A

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Surface Mount

s

Light-weight

N-CHANNEL

Provisional Data Sheet No. PD-9.1547

100 Volt, 0.060

Ω

Ω

Ω

Ω

Ω HEXFET

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

IRFN150

Absolute Maximum Ratings

Parameter

IRFN150

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

34

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

21

IDM

136

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

VGS

Gate-to-Source Voltage

±20

V

EAS

150

mJ

IAR

34

A

EAR

15

mJ

dv/dt

5.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

g

A

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