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IRFN3710 Datasheet(PDF) 1 Page - International Rectifier |
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IRFN3710 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 4 page ![]() Absolute Maximum Ratings Parameter IRFN3710 Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 28 IDM Pulsed Drain Current 180 PD @ TC = 25°C Max. Power Dissipation 125 W Linear Derating Factor 1.0 W/K VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 690 mJ IAR Avalanche Current 27 A EAR Repetitive Avalanche Energy 12.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range oC Package Mounting Surface Temperature 300 (for 5 sec.) Weight 2.6 (typical) g N-CHANNEL Provisional Data Sheet No. PD-9.1417 100 Volt, 0.028 Ω Ω Ω Ω Ω, HEXFET A IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with an ex- tremely efficient device for use in a wide variety of applications. The Surface Mount Device 1 (SMD-1) package rep- resents anothther step in the continual evolution of surface mount technology. Designed to be a close replacement for the TO-3 package, the SMD-1 will give designers the extra flexibility they need to in- crease circuit board density.International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electical performance. Product Summary Part Number BVDSS RDS(on) ID IRFN3710 100V 0.028 Ω 45A Features: n Surface Mount n Small Footprint n Alternative to TO-3 Package n Hermetically Sealed n Avalanche Energy Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Lightweight Next Data Sheet Index Previous Datasheet To Order |
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