IRFP064V

3/30/01

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.60

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

Junction-to-Ambient

–––

40

Thermal Resistance

www.irf.com

1

‡

S

D

G

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use

of TO-220 devices. The TO-247 is similar but superior to

the earlier TO-218 package because of its isolated

mounting hole.

Description

PD - 94112

Absolute Maximum Ratings

Parameter

Max.

Units

130

‡

95

A

Pulsed Drain Current



520

Power Dissipation

250

W

Linear Derating Factor

1.7

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



130

A

Repetitive Avalanche Energy



25

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

4.7

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

TO-247AC