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IRFP150N Datasheet(PDF) 1 Page - International Rectifier

Part # IRFP150N
Description  Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP150N Datasheet(HTML) 1 Page - International Rectifier

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IRFP150N
HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
S
D
G
VDSS = 100V
RDS(on) = 0.036W
ID = 42A
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
TO-247AC
www.irf.com
1
PD- 91503C
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
42
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
30
A
IDM
Pulsed Drain Current
…
140
PD @TC = 25°C
Power Dissipation
160
W
Linear Derating Factor
1.1
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
420
mJ
IAR
Avalanche Current
…
22
A
EAR
Repetitive Avalanche Energy

16
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RqJC
Junction-to-Case
–––
0.95
RqCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RqJA
Junction-to-Ambient
–––
40
Thermal Resistance


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