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IRFP17N50LS Datasheet(PDF) 2 Page - International Rectifier |
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IRFP17N50LS Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP17N50LS 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.6 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.28 0.32 Ω VGS = 10V, ID = 9.9A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ 16A, di/dt ≤ 347A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 3.0mH, RG = 25Ω, IAS = 16A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 390 mJ IAR Avalanche Current ––– 16 A EAR Repetitive Avalanche Energy ––– 22 mJ Avalanche Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.56 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 ––– ––– SVDS = 50V, ID = 9.9A Qg Total Gate Charge ––– ––– 130 ID = 16A Qgs Gate-to-Source Charge ––– ––– 33 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 59 VGS = 10V td(on) Turn-On Delay Time ––– 21 ––– VDD = 250V tr Rise Time ––– 51 ––– ID = 16A td(off) Turn-Off Delay Time ––– 50 ––– RG = 7.5Ω tf Fall Time ––– 28 ––– VGS = 10V Ciss Input Capacitance ––– 2760 ––– VGS = 0V Coss Output Capacitance ––– 325 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 3690 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 84 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 159 ––– VGS = 0V, VDS = 0V to 400V ns |
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