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IRFP32N50K Datasheet(PDF) 2 Page - International Rectifier |
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IRFP32N50K Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP32N50K 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.135 0.16 Ω VGS = 10V, ID = 32A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ 32A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 0.87mH, RG = 25Ω, IAS = 32A, Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 14 ––– ––– SVDS = 50V, ID = 32A Qg Total Gate Charge ––– ––– 190 ID = 32A Qgs Gate-to-Source Charge ––– ––– 59 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 84 VGS = 10V td(on) Turn-On Delay Time ––– 28 ––– VDD = 250V tr Rise Time ––– 120 ––– ID = 32A td(off) Turn-Off Delay Time ––– 48 ––– RG = 4.3Ω tf Fall Time ––– 54 ––– VGS = 10V Ciss Input Capacitance ––– 5280 ––– VGS = 0V Coss Output Capacitance ––– 550 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 45 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 5630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 155 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 265 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V trr Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 32A Qrr Reverse RecoveryCharge ––– 9.0 13.5 µC di/dt = 100A/µs IRRM Reverse RecoveryCurrent ––– 30 ––– A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) S D G Diode Characteristics 32 130 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. |
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