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U3303 Datasheet(PDF) 2 Page - International Rectifier |
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U3303 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR/U3303 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.031 Ω VGS = 10V, ID = 18A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 9.3 ––– ––– S VDS = 25V, ID = 18A ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 29 ID = 18A Qgs Gate-to-Source Charge ––– ––– 7.3 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 13 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V tr Rise Time ––– 99 ––– ID = 18A td(off) Turn-Off Delay Time ––– 16 ––– RG = 13 Ω tf Fall Time ––– 28 ––– RD = 0.8Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 750 ––– VGS = 0V Coss Output Capacitance ––– 400 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 53 80 ns TJ = 25°C, IF = 18A Qrr Reverse RecoveryCharge ––– 94 140 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 33 120 A Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Starting T J = 25°C, L = 590µH RG = 25Ω, IAS = 18A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G S D G
Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A. |
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