Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

60

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.68

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.040

VGS = 10V, ID = 16A „

On-State Resistance

—

—

—

Ω

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

17

—

—

S ( )VDS ≥ 15V, IDS = 16A „

IDSS

Zero Gate Voltage Drain Current

—

—

25

—

—

250

VDS = 0.8 x max. rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

29

—

88

VGS = 10V, ID = 16A

Qgs

Gate-to-Source Charge

6.7

—

15

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

18

—

52

see figures 6 and 13

td(on)

Turn-On Delay Time

—

—

23

VDD = 30V, ID = 16A, RG = 9.1Ω

tr

Rise Time

—

—

130

VGS = 10V

td(off)

Turn-Off Delay Time

—

—

81

tf

Fall Time

—

—

79

see figure 10

LD

Internal Drain Inductance

—

8.7

—

LS

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

2400

—

VGS = 0v, VDS = 25V

Coss

Output Capacitance

—

1100

—

pF

f = 1.0MHz.

Crss

ReverseTransfer Capacitance

—

230

—

see figure 5

Thermal Resistance

Parameter

Min Typ

Max Units

Test Conditions

RthJC Junction-to-Case

—

—

1.25

RthJA Junction-to-Ambient

—

—

80

K/W

…

Typical socket mount

RthCS Case-to-Sink

—

0.21

—

Mounting surface flat, smooth

µA

nC

nH

ns

Measured from the drain

lead, 6mm (0.25 in.) from

package to center of die.

Measured from the

source lead, 6mm (0.25

in.) from package to

source bonding pad.

Modified MOSFET symbol

showing the internal

inductances.

nA

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

16

ISM

Pulse Source Current (Body Diode)



—

—

156

VSD

Diode Forward Voltage

—

—

2.5

V

„

trr

Reverse Recovery Time

—

—

220

ns

Tj = 25°C, IF = 16A, di/dt ≤ 100 A/µs

QRR

Reverse Recovery Charge

—

—

1.6

µC

VDD ≤ 50 V

„

ton

ForwardTurn-OnTime

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

IRFY044CM Device

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

A

Next Data Sheet

Index

Previous Datasheet

To Order