IRFZ24N

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide variety

of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Description

9/13/99

S

D

G

TO-220AB

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

3.3

Case-to-Sink, Flat, Greased Surface

––––

0.50

––––

°C/W

Junction-to-Ambient

––––

––––

62

Thermal Resistance

Parameter

Max.

Units

17

12

A

Pulsed Drain Current



68

Power Dissipation

45

W

Linear Derating Factor

0.30

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

‚

71

mJ

Avalanche Current



10

A

Repetitive Avalanche Energy



4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

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PD - 91354A