©

1998

DATA SHEET

MOS INTEGRATED CIRCUIT

Document No. S12764EJ1V0DS00 (1st edition)

Date Published January 1998 N CP(K)

Printed in Japan

MONOLITHIC QUAD H BRIDGE DRIVER

The information in this document is subject to change without notice.

DESCRIPTION

The

µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs

in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar

transistors.

In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when

the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets.

In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two

channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM

and DVD.

FEATURES

•

Four H bridge circuits employing power MOS FETs

•

High-speed PWM drive: Operating frequency: 120 kHz MAX.

•

Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.)

•

30-pin shrink SOP (300 mil)

ORDERING INFORMATION

Part Number

Package

µPD16837GS

30-pin plastic SSOP (300 mil)

Parameter

Symbol

Conditions

Rating

Unit

Control block supply voltage

–0.5 to +7.0

V

Output block supply voltage

–0.5 to +15

V

Input voltage

V

PW

≤ 5 ms, Duty ≤ 30 %

±1.0

A/phase

1.25

W

Operating temperature range

0 to 75

°C

Peak junction temperature

150

°C

Storage temperature range

–55 to +150

°C

Notes 1. When only one channel operates.

2. When mounted on a glass epoxy board (100 mm

× 100 mm × 1 mm)