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IRG4PSC71U Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PSC71U Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 91681A E C G n-channel Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm • Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • IGBTs optimized for specific application conditions • Cost and space saving in designs that require multiple, paralleled IGBTs Benefits VCES = 600V VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 85 IC @ TC = 100°C Continuous Collector Current 60 A ICM Pulsed Collector Current 200 ILM Clamped Inductive Load Current 200 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 180 mJ PD @ TC = 25°C Maximum Power Dissipation 350 PD @ TC = 100°C Maximum Power Dissipation 140 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Absolute Maximum Ratings W 5/12/99 www.irf.com 1 SUPER - 247 Parameter Min. Typ. Max. Units RθJC Junction-to-Case ––– ––– 0.36 RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– ––– 38 Recommended Clip Force 20.0(2.0) ––– ––– N (kgf) Weight ––– 6 (0.21) ––– g (oz) Thermal Resistance\ Mechanical |
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